|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1119 FEATURES Power dissipation 2. COLLECTOR PCM: 500 mW (Tamb=25) 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range TJ,Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(SAT) VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA -25 -25 -5 -0.1 -0.1 100 40 -0.7 -1.2 180 25 560 A A V v MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking R 100-200 S 140-280 BB T 200-400 U 280-560 |
Price & Availability of 2SB1119 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |